IRF3708STRRPBF
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IRF3708STRRPBF
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IRF3708STRRPBF

Brand:Infineon
Model:IRF3708STRRPBF
stock:22122
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series HEXFET®
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing D2PAK
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 62A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.8V,10V
On resistance (maximum) for different Ids and Vgs 12 mΩ @ 15A,10V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 24 nC @ 4.5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 2417 pF @ 15 V
FET function -
Power dissipation (maximum) 87W(Tc)
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