IPD25CNE8N G
Home
Category
MOSFET
IPD25CNE8N G
The pictures are for reference only
like

IPD25CNE8N G

Brand:Infineon
Model:IPD25CNE8N G
stock:79667
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series OptiMOS™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO252-3
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 85 V
Current at 25 ° C - continuous drain (Id) 35A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 25 mΩ @ 35A,10V
Vgs (th) (maximum) for different Ids 4V @ 39µA
Gate charge (Qg) at different Vgs (maximum) 31 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2070 pF @ 40 V
FET function -
Power dissipation (maximum) 71W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer