Installation type | Surface mount |
packing | CT |
series | - |
Part status | stop production |
working temperature | - |
Encapsulation/Housing | 8-PQFN(5x6) |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 150 V |
Current at 25 ° C - continuous drain (Id) | 10A(Ta),56A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | - |
On resistance (maximum) for different Ids and Vgs | 31 mΩ @ 34A,10V |
Vgs (th) (maximum) for different Ids | 5V @ 150µA |
Gate charge (Qg) at different Vgs (maximum) | 50 nC @ 10 V |
Vgs (max) | - |
Input capacitance at different Vds (Ciss) (maximum) | 2300 pF @ 50 V |
FET function | - |
Power dissipation (maximum) | - |