BSF083N03LQ G
Home
Category
MOSFET
BSF083N03LQ G
The pictures are for reference only
like

BSF083N03LQ G

Brand:Infineon
Model:BSF083N03LQ G
stock:2919
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series OptiMOS™
Part status stop production
working temperature -40°C ~ 150°C(TJ)
Encapsulation/Housing MG-WDSON-2,CanPAK M™
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 13A(Ta),53A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 8.3 mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids 2.2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 18 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1800 pF @ 15 V
FET function -
Power dissipation (maximum) 2.2W(Ta),36W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer