IPB45N06S4L08ATMA1
Home
Category
MOSFET
IPB45N06S4L08ATMA1
The pictures are for reference only
like

IPB45N06S4L08ATMA1

Brand:Infineon
Model:IPB45N06S4L08ATMA1
stock:50133
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.48
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,bulk
series OptiMOS™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO263-3-2
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 45A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 7.9 mΩ @ 45A,10V
Vgs (th) (maximum) for different Ids 2.2V @ 35µA
Gate charge (Qg) at different Vgs (maximum) 64 nC @ 10 V
Vgs (max) ±16V
Input capacitance at different Vds (Ciss) (maximum) 4780 pF @ 25 V
FET function -
Power dissipation (maximum) 71W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer