Installation type | Surface mount |
packing | TR |
series | HEXFET® |
Part status | stop production |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | DirectFET™ Isochoric S1 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 25 V |
Current at 25 ° C - continuous drain (Id) | 17A(Ta),63A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 3.8 mΩ @ 17A,10V |
Vgs (th) (maximum) for different Ids | 2.35V @ 25µA |
Gate charge (Qg) at different Vgs (maximum) | 20 nC @ 4.5 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 1810 pF @ 13 V |
FET function | - |
Power dissipation (maximum) | 1.8W(Ta),26W(Tc) |