IPP65R099C6XKSA1
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likeIPP65R099C6XKSA1
Brand：Infineon
Model：IPP65R099C6XKSA1
stock：82445
Store：ShenZhen/Hongkong
DataSheet：
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Price：1+
￥3.25
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| Installation type | Through-Hole |
| packing | bulk,pipe |
| series | CoolMOS™ |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | PG-TO220-3 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 650 V |
| Current at 25 ° C - continuous drain (Id) | 38A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 99 mΩ @ 12.8A,10V |
| Vgs (th) (maximum) for different Ids | 3.5V @ 1.2mA |
| Gate charge (Qg) at different Vgs (maximum) | 15 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 2780 pF @ 100 V |
| FET function | - |
| Power dissipation (maximum) | 278W(Tc) |
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