IPI032N06N3GE8214AKSA1
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IPI032N06N3GE8214AKSA1
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IPI032N06N3GE8214AKSA1

Brand:Infineon
Model:IPI032N06N3GE8214AKSA1
stock:77708
Store:ShenZhen/Hongkong
DataSheet: Search
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing pipe
series OptiMOS™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO262-3-1
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 120A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 3.2 mΩ @ 100A,10V
Vgs (th) (maximum) for different Ids 4V @ 118µA
Gate charge (Qg) at different Vgs (maximum) 165 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 13000 pF @ 30 V
FET function -
Power dissipation (maximum) 188W(Tc)
Common problem
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