Memory format | DRAM |
Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | Not applicable to new design |
Memory type | Volatile |
storage capacity | 4Gb(256M x 16) |
Voltage - Supply | 1.283V ~ 1.45V |
working temperature | -40°C ~ 95°C(TC) |
Memory interface | Paralleling |
Clock frequency | 933 MHz |
Access time | 20 ns |
Encapsulation/Housing | 96-TFBGA |
Country of origin | Taiwan |
Warehouse | China/Hong Kong |
quality | Original genuine |
Write cycle time - words, pages | 15ns |