Memory format | DRAM |
Installation type | Surface mount |
packing | TR |
series | - |
Part status | On sale |
Memory type | Volatile |
storage capacity | 64Mb(4M x 16) |
Voltage - Supply | 3V ~ 3.6V |
working temperature | 0°C ~ 70°C(TA) |
Memory interface | Paralleling |
clock frequency | 200 MHz |
Access time | 4.8 ns |
Encapsulation/Housing | 54-TSOP(0.400,10.16mm wide) |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
Write cycle time - words, pages | - |