Memory format | DRAM |
Installation type | Surface mount |
packing | TR |
series | - |
Part status | Not applicable to new design |
Memory type | Volatile |
storage capacity | 256Mb(8M x 32) |
Voltage - Supply | 2.3V ~ 3V |
working temperature | -40°C ~ 85°C(TA) |
Memory interface | Paralleling |
clock frequency | 133 MHz |
Access time | 6 ns |
Encapsulation/Housing | 90-TFBGA |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
Write cycle time - words, pages | - |