Memory format | DRAM |
Installation type | Surface mount |
packing | TR |
series | - |
Part status | stop production |
Memory type | Volatile |
storage capacity | 64Mb(2M x 32) |
Voltage - Supply | 3.15V ~ 3.45V |
working temperature | 0°C ~ 70°C(TA) |
Memory interface | Paralleling |
clock frequency | 183 MHz |
Access time | 5 ns |
Encapsulation/Housing | 86-TFSOP(0.400,10.16mm wide) |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
Write cycle time - words, pages | - |