Memory format | DRAM |
Installation type | Surface mount |
packing | TR |
series | - |
Part status | stop production |
Memory type | Volatile |
storage capacity | 4Gb(256M x 16) |
Voltage - Supply | 1.14V ~ 1.26V |
working temperature | -40°C ~ 95°C(TC) |
Memory interface | Paralleling |
Clock frequency | 1.2 GHz |
Access time | - |
Encapsulation/Housing | 96-TFBGA |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
Write cycle time - words, pages | 15ns |