IS43LD16640C-18BLI
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likeIS43LD16640C-18BLI
Brand：ISSI
Model：IS43LD16640C-18BLI
stock：15174
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥12.63
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
| Memory format | DRAM |
| Installation type | Surface mount |
| packing | pallet |
| series | - |
| Part status | On sale |
| Memory type | Volatile |
| storage capacity | 1Gb(64M x 16) |
| Voltage - Supply | 1.14V ~ 1.95V |
| working temperature | -40°C ~ 85°C(TA) |
| Memory interface | Paralleling |
| clock frequency | 533 MHz |
| Access time | - |
| Encapsulation/Housing | 134-TFBGA |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Write cycle time - words, pages | 15ns |
Common problem
Industry trends
M393A2K43EB3-CWE Samsung DDR4 3200 16G Server Memory ECC REG
M474A1K43BB1-CTD Samsung DDR4 8G 2666 ECC server memory
Toshiba MCU plant forced to stop work due to power outage! Or cause a significant reduction in production capacity
DRAM is severely oversupplied and is not expected to stop until the third quarter of 2023
Samsung came with news that there was a change in building a factory in the United States, and the US plan may be lost
M393A2K40DB2-CVF Samsung DDR4 2933 16G server memory
Samsung official website on the 990 PRO / heatsink version: using Samsung's self-developed controller, 1T start
M391A4G43MB1-CTD Samsung DDR4 2666 ECC 32GB server memory module
SK Hynix successfully developed 238 layers of NAND flash memory
M474A1K43DB1-CWE Samsung DDR4 3200 8GB notebook ECC memory
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