MT47H64M4BP-37E:B IC DRAM 256MBIT PARALLEL 60FBGA
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likeMT47H64M4BP-37E:B IC DRAM 256MBIT PARALLEL 60FBGA
Brand：Micron
Model：MT47H64M4BP-37E:B
stock：13874
Store：ShenZhen/Hongkong
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DataSheet
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Price:
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
| Memory format | DRAM |
| Installation type | Surface mount |
| packing | pallet |
| series | - |
| Part status | On sale |
| Memory type | Volatile |
| storage capacity | 256Mb(64M x 4) |
| Voltage - Supply | 1.7V ~ 1.9V |
| working temperature | 0°C ~ 85°C(TC) |
| Memory interface | Paralleling |
| clock frequency | 267 MHz |
| Access time | 15ns |
| Access time | 500 ps |
| Encapsulation/Housing | 60-FBGA |
| Country of origin | China/USA/Japan, etc |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | DDR2 |
| Random read | - |
| DWPD | - |
| Current - maximum | - |
| Flash architecture | - |
Common problem
Industry trends
Samsung came with news that there was a change in building a factory in the United States, and the US plan may be lost
Expected 15%-20% decline in NAND Flash prices in the fourth quarter
India's Tata Group wants to OEM iPhone or set up a joint venture with Wistron Capital
M474A1K43DB1-CWE Samsung DDR4 3200 8GB notebook ECC memory
Samsung official website on the 990 PRO / heatsink version: using Samsung's self-developed controller, 1T start
M393A4G43AB3-CWE Samsung DDR4 3200 RECC 32G server memory module
Texas Instruments' new Texas chip factory began mass production
The market estimates that the price of Q4 memory DRAM will be reduced by about 15%, and the price of DDR5 will be closer to DDR4
M393A4K40EB3-CWE Samsung DDR4 3200 RECC 32G server memory module
SK Hynix successfully developed 238 layers of NAND flash memory
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