MT41J64M16LA-187E:B TR IC DRAM 1GBIT PARALLEL 96FBGA
The pictures are for reference only
likeMT41J64M16LA-187E:B TR IC DRAM 1GBIT PARALLEL 96FBGA
Brand：Micron
Model：MT41J64M16LA-187E:B TR
stock：16374
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price:
The market price fluctuates. Please consult the customer service for the actual price
Similar Product
product details
Common problem
Industry trends
| Memory format | DRAM |
| Installation type | Surface mount |
| packing | TR,CT |
| series | - |
| Part status | On sale |
| Memory type | Volatile |
| storage capacity | 1Gb(64M x 16) |
| Voltage - Supply | 1.425V ~ 1.575V |
| working temperature | 0°C ~ 95°C(TC) |
| Memory interface | Paralleling |
| clock frequency | 533 MHz |
| Access time | - |
| Access time | - |
| Encapsulation/Housing | 96-FBGA |
| Country of origin | China/USA/Japan, etc |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | DDR3 |
| Random read | - |
| DWPD | - |
| Current - maximum | - |
| Flash architecture | - |
Common problem
Industry trends
Advantages of Micron memory chips (why micron chips are recommended)
M393A4K40CB2-CVF Samsung DDR4 2933 32GB server memory
HMAA4GR7AJR8N-WM Hynix (SK Hyundai) DDR4 2933 32G server memory
M391A4G43MB1-CTD Samsung DDR4 2666 ECC 32GB server memory module
M391A2G43BB2-CWE Samsung DDR4 3200 16G server memory module
Real hammer! The iPhone 14 National Bank version uses domestic flash memory, why doesn't Apple admit it?
MTA36ASF4G72PZ-3G2R1 MG DDR4 3200 2Rx4RDIMM 32GB server memory module
M474A4G43MB1-CTD Samsung 32G DDR4 2666 ECC workstation memory
Texas Instruments' new Texas chip factory began mass production
M391A2K43BB1-CTD Samsung DDR4 2666 ECC 16G server memory module
Hot Products
Offer
