MT29F3T08EQHBBG2-3RES:B TR IC FLASH 3TB PARALLEL 272TBGA
The pictures are for reference only
likeMT29F3T08EQHBBG2-3RES:B TR IC FLASH 3TB PARALLEL 272TBGA
Brand：Micron
Model：MT29F3T08EQHBBG2-3RES:B TR
stock：15655
Store：ShenZhen/Hongkong
DataSheet：
Search
Search
Price:
The market price fluctuates. Please consult the customer service for the actual price
Similar Product
product details
Common problem
Industry trends
| Memory format | Flash Memory |
| Installation type | Surface mount |
| packing | TR |
| series | - |
| Part status | On sale |
| Memory type | nonvolatile |
| storage capacity | 3Tb(384G x 8) |
| Voltage - Supply | 2.5V ~ 3.6V |
| working temperature | 0°C ~ 70°C(TA) |
| Memory interface | Paralleling |
| clock frequency | 333 MHz |
| Access time | - |
| Access time | - |
| Encapsulation/Housing | - |
| Country of origin | China/USA/Japan, etc |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | FLASH - NAND |
| Random read | - |
| DWPD | - |
| Current - maximum | - |
| Flash architecture | - |
Common problem
Industry trends
Advantages of Micron memory chips (why micron chips are recommended)
Toshiba MCU plant forced to stop work due to power outage! Or cause a significant reduction in production capacity
SK Hynix successfully developed 238 layers of NAND flash memory
M393A4K40DB3-CWE Samsung DDR4 3200 32G Server Memory Stick RDIMM
HMA84GR7JJR4N-VK SKIC HYNIX DDR4 2666 32G server workstation memory module
Chip exports fell by 30%, and the price of SSD memory was directly cut
Calling Samsung Sony! SK Hynix has developed a 100-million-pixel image sensor
MTA36ASF4G72PZ-2G9E2 MICRON/Micron DDR4 2933 32GB server memory
M393A2K43EB3-CWE Samsung DDR4 3200 16G Server Memory ECC REG
M391A4G43AB1-CWE Samsung DDR4 3200 ECC 32GB server module
Hot Products
Offer
