Total: 17
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
stop production
Not applicable to new design
MOSFET(Metal oxide)
SiCFET(silicon carbide)
SiC(Silicon carbide bonded crystal tube)
N channels
±20V
±30V
+22V,-8V
+20V,-2V
-
176W(Tc)