SICFET N-CH 1200V 35A D3PAK MSC080SMA120S
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Description:
SICFET N-CH 1200V 35A D3PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
MSC080SMA120S(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31883,Price reference "real-time change" China/Hongkong。 MSC080SMA120S package/specs, Download MSC080SMA120S、Datasheet。