MOSFET N-CH 800V 34A T-MAX APT34N80B2C3G
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Description:
MOSFET N-CH 800V 34A T-MAX
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APT34N80B2C3G(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7560,Price reference "real-time change" China/Hongkong。 APT34N80B2C3G package/specs, Download APT34N80B2C3G、Datasheet。