MOSFET N-CH 500V 30MA SOT89-3 LND150N8-G
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Description:
MOSFET N-CH 500V 30MA SOT89-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
LND150N8-G(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19868,Price reference "real-time change" China/Hongkong。 LND150N8-G package/specs, Download LND150N8-G、Datasheet。