MOSFET N-CH 800V 31A ISOTOP APT29F80J
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Description:
MOSFET N-CH 800V 31A ISOTOP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APT29F80J(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8816,Price reference "real-time change" China/Hongkong。 APT29F80J package/specs, Download APT29F80J、Datasheet。