MOSFET N-CH 650V 38A 4TDFN FCMT080N65S3
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Description:
MOSFET N-CH 650V 38A 4TDFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCMT080N65S3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24750,Price reference "real-time change" China/Hongkong。 FCMT080N65S3 package/specs, Download FCMT080N65S3、Datasheet。