MOSFET N-CH 1000V 43A SP4 APTM100DA18TG
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Description:
MOSFET N-CH 1000V 43A SP4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APTM100DA18TG(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4991,Price reference "real-time change" China/Hongkong。 APTM100DA18TG package/specs, Download APTM100DA18TG、Datasheet。