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MOSFET P-CH 400V 180MA TO92-3 TP2640N3-G

TP2640N3-G image
The pictures are for reference only
Brand:
Model:
TP2640N3-G
Description:
MOSFET P-CH 400V 180MA TO92-3
Stock:
63027
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
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手机icoPhone:13794459602(Wechat)
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    180mA(Tj)
  • Drain source voltage (Vdss)
    400 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    2.5V,10V
  • FET Type
    P channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    -
  • Input capacitance at different Vds (Ciss) (maximum)
    300 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    15 Ω @ 300mA,10V
  • Power dissipation (maximum)
    1W(Ta)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    2V @ 1mA
  • packing
    bag
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    TO-92-3
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    stop production
  • PDFicoDataSheet
    TP2640N3-G(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory63027,Price reference "real-time change" China/Hongkong。 TP2640N3-G package/specs, Download TP2640N3-G、Datasheet。
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