MIC94031CYW parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

MIC94031CYW

Description:

MOSFET P-CH 16V 1A

Stock:

2647

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Current at 25 ° C - continuous drain (Id)

1A(Ta)

Drain source voltage (Vdss)

16 V

Drive voltage (maximum RdsOn, minimum RdsOn)

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

On resistance (maximum) for different Ids and Vgs

450 mΩ @ 100mA,10V

Power dissipation (maximum)

568mW(Ta)

Vgs (max)

Vgs (th) (maximum) for different Ids

1.4V @ 250µA

packing

series

TinyFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Part status

stop production

DataSheet

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MIC94031CYW（MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2647,Price reference "real-time change" China/Hongkong。 MIC94031CYW package/specs, Download MIC94031CYW、Datasheet。