MOSFET N-CH 60V 80A TO263-3 IPB80N06S4L05ATMA1
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Description:
MOSFET N-CH 60V 80A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB80N06S4L05ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory35061,Price reference "real-time change" China/Hongkong。 IPB80N06S4L05ATMA1 package/specs, Download IPB80N06S4L05ATMA1、Datasheet。