MOSFET N-CH 600V 5A IPAK STU7NM60N
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Description:
MOSFET N-CH 600V 5A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STU7NM60N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory44049,Price reference "real-time change" China/Hongkong。 STU7NM60N package/specs, Download STU7NM60N、Datasheet。