MOSFET N-CH 30V 11A SO8FL NTMFS4C06NAT1G
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Description:
MOSFET N-CH 30V 11A SO8FL
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMFS4C06NAT1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory54365,Price reference "real-time change" China/Hongkong。 NTMFS4C06NAT1G package/specs, Download NTMFS4C06NAT1G、Datasheet。