MOSFET N-CH 525V 2.5A IPAK STU4N52K3
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Description:
MOSFET N-CH 525V 2.5A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STU4N52K3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55033,Price reference "real-time change" China/Hongkong。 STU4N52K3 package/specs, Download STU4N52K3、Datasheet。