MOSFET N-CH 55V 120A D2PAK STB180N55F3
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Description:
MOSFET N-CH 55V 120A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB180N55F3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory92955,Price reference "real-time change" China/Hongkong。 STB180N55F3 package/specs, Download STB180N55F3、Datasheet。