MOSFET N-CH 500V 12A D2PAK STB13NM50N
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Description:
MOSFET N-CH 500V 12A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB13NM50N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory62173,Price reference "real-time change" China/Hongkong。 STB13NM50N package/specs, Download STB13NM50N、Datasheet。