MOSFET N-CH 600V 6A POWERFLAT STL18NM60N
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Description:
MOSFET N-CH 600V 6A POWERFLAT
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STL18NM60N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory49830,Price reference "real-time change" China/Hongkong。 STL18NM60N package/specs, Download STL18NM60N、Datasheet。