MOSFET N-CH 80V 80A DPAK STD110N8F6
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Description:
MOSFET N-CH 80V 80A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD110N8F6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory38680,Price reference "real-time change" China/Hongkong。 STD110N8F6 package/specs, Download STD110N8F6、Datasheet。