MOSFET N-CH 600V 20A I2PAK STI26NM60N
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Description:
MOSFET N-CH 600V 20A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI26NM60N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory97600,Price reference "real-time change" China/Hongkong。 STI26NM60N package/specs, Download STI26NM60N、Datasheet。