MOSFET N-CH 600V 25A D2PAK STB33N60DM6
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Description:
MOSFET N-CH 600V 25A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB33N60DM6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory71382,Price reference "real-time change" China/Hongkong。 STB33N60DM6 package/specs, Download STB33N60DM6、Datasheet。