MOSFET N-CH 600V 21A D2PAK STB25NM60N
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Description:
MOSFET N-CH 600V 21A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB25NM60N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory34131,Price reference "real-time change" China/Hongkong。 STB25NM60N package/specs, Download STB25NM60N、Datasheet。