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    Home/    Category/    MOSFET/    STI10NM60N

    MOSFET N-CH 600V 10A I2PAK STI10NM60N

    STI10NM60N image
    The pictures are for reference only
    Brand:
    ST
    Model:
    STI10NM60N
    Description:
    MOSFET N-CH 600V 10A I2PAK
    Stock:
    56493
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Price：$0.4
    The market price fluctuates. Please consult the customer service for the actual price
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    10A(Tc)
  • Drain source voltage (Vdss)
    600 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    19 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    540 pF @ 50 V
  • On resistance (maximum) for different Ids and Vgs
    550 mΩ @ 4A,10V
  • Power dissipation (maximum)
    70W(Tc)
  • Vgs (max)
    ±25V
  • Vgs (th) (maximum) for different Ids
    4V @ 250µA
  • packing
    pipe
  • series
    MDmesh™ II
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    I2PAK(TO-262)
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    stop production
    • PDFicoDataSheet
    STI10NM60N（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56493,Price reference "real-time change" China/Hongkong。 STI10NM60N package/specs, Download STI10NM60N、Datasheet。
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