MOSFET N-CH 500V 11A D2PAK STB12NM50N
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Description:
MOSFET N-CH 500V 11A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB12NM50N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15040,Price reference "real-time change" China/Hongkong。 STB12NM50N package/specs, Download STB12NM50N、Datasheet。