MOSFET P-CH 30V 8.8A 8SOIC SI4435DY
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Description:
MOSFET P-CH 30V 8.8A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SI4435DY(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory59628,Price reference "real-time change" China/Hongkong。 SI4435DY package/specs, Download SI4435DY、Datasheet。