MOSFET N-CH 650V 11A TO-220 STP11NM65N
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Description:
MOSFET N-CH 650V 11A TO-220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STP11NM65N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28417,Price reference "real-time change" China/Hongkong。 STP11NM65N package/specs, Download STP11NM65N、Datasheet。