MOSFET N-CH 600V 11A D2PAK STB13N60M2
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Description:
MOSFET N-CH 600V 11A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB13N60M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20821,Price reference "real-time change" China/Hongkong。 STB13N60M2 package/specs, Download STB13N60M2、Datasheet。