MOSFET P-CH 30V 4A SOT23-6 STT4P3LLH6
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Description:
MOSFET P-CH 30V 4A SOT23-6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STT4P3LLH6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory58495,Price reference "real-time change" China/Hongkong。 STT4P3LLH6 package/specs, Download STT4P3LLH6、Datasheet。