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    K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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    Home/    Category/    MOSFET/    STD1NK60T4

    MOSFET N-CH 600V 1A DPAK STD1NK60T4

    STD1NK60T4 image
    The pictures are for reference only
    Brand:
    ST
    Model:
    STD1NK60T4
    Description:
    MOSFET N-CH 600V 1A DPAK
    Stock:
    70746
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Price：$0.21
    The market price fluctuates. Please consult the customer service for the actual price
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    座机icoTel ：0755-82988826
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    1A(Tc)
  • Drain source voltage (Vdss)
    600 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    10 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    156 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    8.5 Ω @ 500mA,10V
  • Power dissipation (maximum)
    30W(Tc)
  • Vgs (max)
    ±30V
  • Vgs (th) (maximum) for different Ids
    3.7V @ 250µA
  • packing
    TR,CT
  • series
    SuperMESH™
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    DPAK
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    STD1NK60T4（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory70746,Price reference "real-time change" China/Hongkong。 STD1NK60T4 package/specs, Download STD1NK60T4、Datasheet。
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    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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