MOSFET N-CH 800V 3A DPAK STD4NK80ZT4
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Description:
MOSFET N-CH 800V 3A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD4NK80ZT4(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory37279,Price reference "real-time change" China/Hongkong。 STD4NK80ZT4 package/specs, Download STD4NK80ZT4、Datasheet。