STL115N10F7AG parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ STL115N10F7AG

The pictures are for reference only

Brand:

Model:

STL115N10F7AG

Description:

MOSFET N-CH 100V 107A POWERFLAT

Stock:

98940

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.54

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Current at 25 ° C - continuous drain (Id)

107A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

72.5 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

5600 pF @ 50 V

On resistance (maximum) for different Ids and Vgs

6 mΩ @ 53A,10V

Power dissipation (maximum)

136W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4.5V @ 250µA

packing

TR,CT

series

Automotive, AEC-Q101, STripFET™ F7

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PowerFlat™(5x6)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount,Wettable wings

Part status

On sale

DataSheet

下载STL115N10F7AG.pdf

STL115N10F7AG（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory98940,Price reference "real-time change" China/Hongkong。 STL115N10F7AG package/specs, Download STL115N10F7AG、Datasheet。