MOSFET N-CH 200V 61A D2PAK STB80N20M5
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Description:
MOSFET N-CH 200V 61A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB80N20M5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory86611,Price reference "real-time change" China/Hongkong。 STB80N20M5 package/specs, Download STB80N20M5、Datasheet。