MOSFET N-CH 650V 4A DPAK STD6N65M2
The pictures are for reference only
Description:
MOSFET N-CH 650V 4A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD6N65M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory57225,Price reference "real-time change" China/Hongkong。 STD6N65M2 package/specs, Download STD6N65M2、Datasheet。