MOSFET N-CH 100V 4A POWERFLAT STL3N10F7
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Description:
MOSFET N-CH 100V 4A POWERFLAT
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STL3N10F7(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99104,Price reference "real-time change" China/Hongkong。 STL3N10F7 package/specs, Download STL3N10F7、Datasheet。