MOSFET N-CH 600V 26A D2PAK STB33N60M2
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Description:
MOSFET N-CH 600V 26A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB33N60M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory17584,Price reference "real-time change" China/Hongkong。 STB33N60M2 package/specs, Download STB33N60M2、Datasheet。